Signal amplifier circuit with the use of a field effect - transistor with current unsaturated aet -saturated triodes - characteristic

• 1. 一种具有不饱和特性的肖特基晶体管及其制备方法 [P] . 中国专利： CN106206749A . 2016-12-07
• 2. 具有内含式电流检测场效应晶体管的功率集成电路器件 [P] . 中国专利： CN101901805B . 2013.03.13
• 3. Signal amplifier circuit with a field effect transistor having current unsaturated triode vacuum tube characteristics [P] . 美国专利： US4008442A . 1977-02-15

  机译： 具有具有电流不饱和三极管真空管特性的场效应晶体管的信号放大器电路

• 4. Signal amplifier circuit using a field effect transistor having current unsaturated triode vacuum tube characteristics [P] . 美国专利： US4000474A . 1976-12-28

  机译： 使用具有电流不饱和三极管真空管特性的场效应晶体管的信号放大器电路

• 5. AMPLIFIER WITH FIELD EFFECT TRANSISTORS HAVING TRIODE-TYPE DYNAMIC CHARACTERISTICS [P] . CA1040278A . 1978-10-10

  机译： 具有三极管型动态特性的场效应晶体管放大器

• 1. Five New MVL Current Mode Differential Absolute Value Circuits Based on Carbon Nano-tube Field Effect Transistors(CNTFETs) [J] . Mojtaba Jamalizadeh, Fazel Sharifi, Mohammad Hossein Moaiyeri, 纳微快报：英文版 . 2010,第004期
• 2. Synthetic plasma and silicon tubular harness-based pure biological transistor amplifier circuit [J] . Killol Pandya, Shivprasad Kosta 生物医学研究杂志（英文版） . 2017,第005期
• 3. Synthetic plasma and silicon tubular harness-based purebiological transistor amplifier circuit [J] . 生物医学研究杂志：英文版 . 2017,第005期
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• 5. Transistor characteristics of thermal CVD carbon nanotubes field emission triode [C] . Wong, Y.M., Kang, . 2004
• 6. Behavioral modeling of zinc-oxide, thin-film, field-effect transistors and the design of pixel driver, analog amplifier, and low-noise RF amplifier circuits. [D] . Calder, Leroy Alfred, III. 2010
• 7. Stacked Transistor Bias Circuit of Class-B Amplifier for Portable Ultrasound Systems [O] . Hojong Choi 2019
• 8. Current Identification in Signal Lines on Printed Circuit Board By Using Spatial Characteristic of Magnetic Field Probe [O] . Tatsuya DOI, Norio MASUDA 2002
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• 1. A Very Low Level dc Current Amplifier Using SC Circuit: Effects of Parasitic Capacitances and Duty Ratio on Its Output [J] . Hiroki Higa ,Ryota Onaga ,Naoki Nakamura . 应用科学（英文） . 2014,第9期
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• 3. 低关态电流的InN/SiGe/Si隧穿场效应晶体管的研究 [A] . 马阳昊 . 2017