Process for the formation of a monocrystalline layer of an oxidic material with a spinel - or garnet structure on a substrate

摘要

A method of growing monocrystalline layers of oxidic material having a spinel or garnet crystal structure on a monocrystalline substrate by epitaxial growth from a melt containing a lead flux. Such a method is particularly suitable for growing magnetic bubble domain memory layers using suitable ferromagnetic oxidic materials. A problem which has been encountered in growing such memory layers from melts containing a lead flux is the formation of projections which tend to pin domain walls in a magnetic bubble domain memory layer. Monocrystalline layers of an oxidic material having a garnet or spinel crystal structure are grown on a deposition face of a monocrystalline substrate. A normal to this deposition face is inclined at an angle of at least 0.3 DEG and at most 10 DEG to a normal to a natural growth face of the substrate crystal.