Write response circuit for flip-flops - has gate providing quick response of cross coupled transistor flip-flops and reduced current consumption

摘要

Circuitry is provided for diode-coupled, cross-connected bipolar transistor memories to minimise the current consumption and improve the speed of response during the monitoring process. The facility enables a greater number of flip-flops to be used in parallel. The memory cell consists of two cross-connected inverters over diodes and coupled load transistor. Schottky diodes are coupled into bit lines connected to AND gates. When write in occurs, a select pulse is applied and a transistor switches to allow the word line level to go low. A further transistor switches off. The AND gates are enabled to allow data to be entered into the memory cell.