Formation of epitaxial layers of semiconductor material - uses deposition from gas phase, with selected proportions of solid constituents added, for evaporation and subsequent deposition

摘要

The epitaxial layers of solid semiconductor are used in the manufacture of integrated circuits. The structures are produced at temperatures in the region where the material can be separated with a composition of high homogeneity. The layers are grown from a gas phase during the transmission of output materials from the substrate. The substrate is filled with two of the initial materials with different contents of varying components. The ratio of the surface content of any local section of the substrate supplied with solids (1, 2) periodically for gas phase deposition is chosen such that the proportion of the period of dwell of the solids added will correspond with the interval in each period for each local section of the substrate (3) necessary for the transmission of a quantity of the material. The proportion of the surface content of materials will be constant and equal for the whole surface.