Zinc oxide on silicon device for parallel in, serial out, discrete fourier transform

摘要

A material suitable for the propagation of acoustic waves on its surface comprises a substrate of semiconductor material, of which there exists an oxide, excluding the class of piezoelectric materials, the substrate having at least one flat surface. A layer of thermally grown oxide of the semiconductor material, is disposed on the flat surface. A film of titanium, approximately 300 angstroms thick, is disposed on at least a part of the layer of oxide. A layer of vacuum- deposited metal is disposed on the film of titanium. A layer of a piezoelectrid vacuum- sputtered material is on the layer of vacuum- deposited metal and on the oxide. The semiconductor material may be silicon, the oxide may be silicon dioxide, the piezoelectric material may be zinc oxide, and the metal may be gold. The material further comprises an interdigitated electrode structure disposed upon the piezoelectric material, which, when an electrical signal is applied to it, can cause propagation of a surface acoustic wave (SAW) upon the surface of the piezoelectric material, the combination comprising a SAW transducer.