首页> 外国专利> Residual gas recovery in silicon deposition by thermal decomposition - by condensing chloro-silane cpds. and freezing hydrogen chloride, leaving purified hydrogen

Residual gas recovery in silicon deposition by thermal decomposition - by condensing chloro-silane cpds. and freezing hydrogen chloride, leaving purified hydrogen

机译:通过热分解-通过冷凝氯硅烷cpds回收硅沉积中的残留气体。并冷冻氯化氢,剩下纯净的氢气

摘要

In the recovery of unused residual gases from a mixt. of chlorosilanes (I), H2 and HCl obtd. in the deposition of Si by thermal decompsn. of a gas mixt. of (I) and H2, (I) are condensed at a temp. between the b. pt. of (I) and the b. pt. of HCl and then HCl is frozen out at a temp. below its m. pt. Pref. (I) are condensed out at max. -100 degrees C and then distilled. The HCl is frozen out at min. -150 degrees C using liquid O2, liquid N2 or an electric cooling aggregate. The purified H2 is reused directly n the Si deposition process. Recovery takes place at min. technical cost.
机译:从混合气中回收未使用的残留气体。含氯硅烷(I),H 2和HCl。通过热分解来沉积硅。混合气体。 (I)和H2中的(I)在一个温度下冷凝。之间b。点(I)和b。点HCl,然后在一定温度下将其冷冻。低于米点首选(I)最多凝结-100摄氏度,然后蒸馏。 HCl至少在5分钟后被冻结。使用液体O2,液体N2或电冷却剂在-150摄氏度下进行。纯化的H2可直接在Si沉积工艺中重复使用。恢复时间为分钟。技术成本。

著录项

  • 公开/公告号DE2918060A1

    专利类型

  • 公开/公告日1980-11-13

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19792918060

  • 发明设计人 DIETZEWOLFGANGDIPL.-CHEM.DR.;

    申请日1979-05-04

  • 分类号C01B33/02;C07F7/12;

  • 国家 DE

  • 入库时间 2022-08-22 15:16:33

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