Temp.-measuring method based on barrier layer, semiconductor component - deriving temp. from differential inner resistance of component initiated by biassing voltage

摘要

The temp. measuring procedure depends upon a barrier layer, semiconductor component initiated by a biassing voltage as the temp. sensor. This sensor can be exchanged to avoid fresh calibrations of the null point and the scale factor. It is esp. useful in chemical thermometers since a separate sensor can be used for each patient. The temp. is derived from the differential inner resistance of the semiconductor component. An a.c. can be applied to the latter and the resulting voltage drop evaluated to find the temp. The semiconductor component can be a diode. The working point of the component can be adjusted so that it operates in a quasi-linear characteristic section. The component can be embedded in a glass, plastic or ceramic sleeve and provided with a plug-in arrangement.