Gate turn-off type thyristor - has base inlaid emitter zones for shorting base to emitters using FET gate drive

摘要

The anode (A)(5) is connected to a P layer (4) followed by an N layer (3) and the top base layer (2), P type, which contains the emitter zones (1a to 1d) to which the cathode electrodes (10 to 13)(K) are connected. The shorting electrodes (6 to 9), to the gate (G), are connected to the base layer (2) so that a complete outer circular structure (at F) with strips (6 to 9) interleave with the strip emitter zones (1a to 1d). The gate (G) is connected through an FET switch (14), which may be on the same integrated circuit chip, to the shorting electrodes (6 to 9) and the cathode (K). With a control potential (U1) on the gate (G) and the FET switch (14) closed, the emitter zones (1a to 1d) and the base (2) are short circuit so that the thyristor is blocked. The thyristor may be triggered by a pulse (P1) from a control circuit (Z1) connected to the centre shorting electrode (8). The separate pulse speeds up by the two way switching procedure, opposed to removing the potential from the electrodes by opening the gate (14).