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Epitaxial integrated e - de firmly body - detector telescope

机译:外延一体化电子稳体探测器望远镜

摘要

An epitaxial integrated energy solid state detector telescope has a semiconducting plate with a complex structure of the same conductivity formed by epitaxial crystal growth of the semiconducting layer on a highly doped, low resistance layer which is itself formed on a high purity substrate. The semiconducting plate has rectifying electrodes on both sides. The detector detects charged particles and measures their incident energy. It is a new type of detector combining 'dE' and 'E' detectors in a single block without the irregularities associated with the conventional etching methods. A 'dE' detector (1) is formed on the epitaxial semiconductor layer and an 'E' detector (2) is formed on the high purity semiconductor substrate by forming barrier layers extending from the outer surface to a very low resistance layer using bias voltages on the electrodes (A1,A2).
机译:外延集成能量固态检测器望远镜具有具有相同导电性的复杂结构的半导体板,该半导体板是通过在高掺杂,低电阻层上半导体层的外延晶体生长而形成的,该高掺杂低电阻层本身形成在高纯度基板上。该半导体板在两侧均具有整流电极。检测器检测带电粒子并测量其入射能量。这是一种新型检测器,将“ dE”和“ E”检测器组合在一个块中,没有与常规蚀刻方法相关的不规则性。通过使用偏置电压形成从外表面延伸到极低电阻层的势垒层,在外延半导体层上形成'dE'检测器(1),在高纯度半导体衬底上形成'E'检测器(2)在电极(A1,A2)上。

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