Epitaxial integrated energy solid state detector telescope - is for charged particles formed in single block using barrier biassing to detect energy at different levels

摘要

An epitaxial integrated energy solid state detector telescope has a semiconducting plate with a complex structure of the same conductivity formed by epitaxial crystal growth of the semiconducting layer on a highly doped, low resistance layer which is itself formed on a high purity substrate. The semiconducting plate has rectifying electrodes on both sides. The detector detects charged particles and measures their incident energy. It is a new type of detector combining 'dE' and 'E' detectors in a single block without the irregularities associated with the conventional etching methods. A 'dE' detector (1) is formed on the epitaxial semiconductor layer and an 'E' detector (2) is formed on the high purity semiconductor substrate by forming barrier layers extending from the outer surface to a very low resistance layer using bias voltages on the electrodes (A1,A2).