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VMOS FET switching device - has bipolar power transistors connected in parallel and biassed at working point below saturation
VMOS FET switching device - has bipolar power transistors connected in parallel and biassed at working point below saturation
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机译:VMOS FET开关设备-具有并联连接的双极型功率晶体管,并在低于饱和的工作点偏置
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摘要
The switching device has a vertical metal-oxide-semiconductor (VMOS) FET(47) and a bipolar power transistor(45). The bipolar transistor is connected by its collector to the VMOS FET's drain and by its base to the source. A device (5') delivers a control signal to the gate of the VMOS FET in order to bias the bipolar transistor at its working point within a region up to saturation. Several such switching devices are provided and have the gates of their VMOS FETs connected together. The collector/emitter paths of the bipolar transistors are in parallel to increase the power switched.
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