METHOD FOR MANUFACTURING COMPLEMENTARY BIPOLAR TRANSISTORS AND MOS DEVICES WITH COMPLEMENTARY SYMMETRY WITH POLYCRYSTALLINE CONTROL ELECTRODES

摘要

P ONE INTRODUCES: IMPURITIES P IN REGIONS OF SUBSTRATE N TO FORM A REGION 28 OF PNP COLLECTOR AND A REGION 32 OF BODY OF MOS DEVICE WITH CHANNEL N; IMPURITIES N IN REGION 28 TO FORM A REGION 36 BASE N AND IN REGION 32 TO FORM REGIONS 42, 44 OF SOURCE AND DRAIN N; IMPURITIES P IN REGIONS OF SUBSTRATE N TO FORM A BASE REGION 48 OF NPN DEVICE AND REGIONS 50, 52 OF SOURCE AND DRAIN OF A P-CHANNEL MOS DEVICE; IMPURITIES P IN REGIONS 36 AND IN P REGIONS TO FORM ISSUER REGIONS 56 AND CONTACT REGIONS; IMPURITIES N IN REGIONS 48 AND IN REGIONS N. /P