METHOD FOR ADHERING A PASSIVATION LAYER ON GOLDEN ZONES OF A SEMICONDUCTOR

摘要

The invention relates to a method for adhering a coating layer to regions of a semi-conductor. This method consists in using a semiconductor substrate 4 on which at least one GOLDEN AREA 5 IS FORMED, SELECTIVELY DEPOSITING A LAYER 7 OF METAL, REACTING WITH GOLD, ON THIS GOLDEN ZONE TO FORM AN INTERFACE 8 BETWEEN GOLD AND REACTIVE METAL, REAGGING GOLD AND REACTIVE METAL , TO ELIMINATE THE PART OF THE METAL HAVING NOT REACTED MATTER TO MATER NU THE INTERFACE 8 OF REACTION, AND TO DEPOSIT A LAYER OF PASSIVATION ON THIS INTERFACE WHICH, BY THE FACT OF THE REACTION, ENSURES EXCELLENT ADHERENCE OF THE LAYER OF PASSIVATION. / P P FIELD OF APPLICATION: MANUFACTURE OF INTEGRATED CIRCUITS INCLUDING IN PARTICULAR POWER TRANSISTORS. / P