首页> 外国专利> PERFECTED PHOTOVOLTAIC DEVICE, PROCESS FOR ITS FORMATION AND PERFECTED ELECTRODE

PERFECTED PHOTOVOLTAIC DEVICE, PROCESS FOR ITS FORMATION AND PERFECTED ELECTRODE

机译:完善的光伏装置,其形成过程和完善的电极

摘要

Open circuit voltage enhancement of photovoltaic devices (10) and electrophotochemical cell electrodes (74) is made possible by adding a thin insulating layer (16, 80) to the semiconductor bodies (13, 76) of the devices. The insulating layer may be added between semiconductor layers of different conductivity within the active photoresponsive regions of the bodies. The bodies may be formed from an amorphous silicon alloy containing fluorine, and preferably hydrogen. The fluorine acts as a compensating or altering eiement to reduce the density of states in the energy gap thereof. The semiconductor bodies may be also formed trom crystalline or polycrystalline semiconductor materials as well. Also disclosed is an electrode for use in an electrophotochemical cell, which electrode includes an insulating layer (80) over the semiconductor electrode body (76) in accordance with the present invention. The insulating layer enhances the open circuit voltage of the devices without affecting short circuit current to increase the efficiency of the devices.
机译:通过向装置的半导体本体(13、76)添加薄的绝缘层(16、80),可以提高光伏装置(10)和光电电池电极(74)的开路电压。可以在主体的有源光响应区域内的不同电导率的半导体层之间添加绝缘层。所述主体可以由包含氟并且优选为氢的非晶硅合金形成。氟用作补偿或改变元素以减小其能隙中的状态密度。半导体本体也可以由晶体或多晶半导体材料形成。还公开了一种用于光化学电池的电极,该电极包括根据本发明的在半导体电极体(76)上的绝缘层(80)。绝缘层在不影响短路电流的情况下提高了器件的开路电压,从而提高了器件的效率。

著录项

  • 公开/公告号BR8104654A

    专利类型

  • 公开/公告日1982-08-31

    原文格式PDF

  • 申请/专利权人 ATLANTIC RICHFIED CO;

    申请/专利号BR19818104654

  • 发明设计人 MADAM ARUN;OVSHINSKY STANFORD ROBERT;

    申请日1981-07-20

  • 分类号H01M4/38;

  • 国家 BR

  • 入库时间 2022-08-22 13:54:39

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