PREPARATION OF SILICON NITRIDE FILMS BY PHOTOCHEMICAL VAPOR DEPOSITION

摘要

Low temperature photonitride (LTPN) films of excellent quality have been prepared at temperatures ranging from 300° C. downward to 100. degree. C. by a photochemical vapor deposition process, wherein a mixture of silane, ammonia, and hydrazine is caused to react to form Si. sub.3 N. sub.4 films at the substrate interface. These films are suitable for the preparation of silicon nitride passivation layers on solid-state devices, such as metal-oxide semiconductors (MOS) and charge coupled devices to impart enhanced reliability.