首页> 外国专利> Process for producing nucleate boiling centers on a surface of a silicon semiconductor substrate, cooling method using a surface produced by said process and apparatus for cooling a semiconductor device

Process for producing nucleate boiling centers on a surface of a silicon semiconductor substrate, cooling method using a surface produced by said process and apparatus for cooling a semiconductor device

机译:在硅半导体衬底的表面上产生形核沸腾中心的方法,使用由所述方法产生的表面的冷却方法以及用于冷却半导体器件的设备

摘要

1. A method of producing nucleate boiling sites on a surface of a silicon semiconductor body for cooling said body by means of a halogenated hydrocarbon cooling fluid, wherein by means of sandblasting the surface of a silicon substrate lattice defects and crystalline damage are made in said surface, characterized in that the lattice defects and crystalline damages are removed by selectively exposing this surface to a silicon etchant.
机译:1.一种在硅半导体本体的表面上产生核沸腾位点的方法,以借助于卤代烃冷却液来冷却所述本体,其中,通过喷砂硅衬底的表面,在所述衬底上产生晶格缺陷和晶体损伤。表面,其特征在于,通过选择性地将该表面暴露于硅蚀刻剂,可以消除晶格缺陷和晶体损伤。

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