method of halbleiterplättchen genius by diffusion from the semiconductor material deposited layer on a

• 1. 通过CVD方法在半导体晶片上沉积层的方法以及用于实施该方法的室 [P] . 中国专利： CN101634014B . 2012.04.18
• 2. 通过CVD方法在半导体晶片上沉积层的方法以及用于实施该方法的室 [P] . 中国专利： CN101634014A . 2010-01-27
• 3. method of halbleiterplättchen genius by diffusion from the semiconductor material deposited layer on a [P] . 德国专利： DE2316520B2 . 1980-11-27

  机译： 通过从半导体材料沉积层扩散到硅片上而使halbleiterplättchen天才的方法

• 4. method of halbleiterplaettchen genius by diffusion from the semiconductor material deposited layer on a [P] . 德国专利： DE000002316520A . 1973-10-11

  机译： 通过从半导体材料沉积层扩散到

• 5. method of silicon halbleiterplättchen genius [P] . 德国专利： DE2463041C2 . 1983-02-03

  机译： 硅天才的方法

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• 2. Diffusion in cylindrically layered materials using the thin-layer method [C] . Andreas E. Joanni, Eduardo Kausel Massachusetts Institute of Technology(MIT) Conference on Computational Fluid and Solid Mechanics 2003 v.1; 20030617-20030620; Cambridge,MA; US . 2003
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• 5. On the effect of thermodiffusion on solute segregation during the growth of semiconductor materials by the vertical Bridgman method [O] . Ben Sassi Mokhtar, Kaddeche Slim, Lappa Marcello, 2017

• 1. Applications of Secondary Electron Composition Contrast Imaging Method in Microstructure Studies on Heterojunction Semiconductor Devices and Multilayer Materials [J] . 刘安生 ,邵贝羚 ,安生 . 稀有金属：英文版 . 1999,第2期
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