Stabilising thin film gas sensor characteristics - by subjecting them to discharge in oxygen atmosphere using aluminium electrode

摘要

Method is described of stabilising the characteristics of thin film gas sensors using oxide semiconductors on insulating substrates for monitoring air contamination enables the operating life of such elements to be extended. The arrangement with the oxide semiconducting layer is subjected to a discharge treatment in an oxygen atmosphere using aluminium electrodes. The arrangement being processed is arranged at the centre of the electrodes near the cathode and is connected to the anode potential. The discharge process takes place at an oxygen press. of 0.1 mbar using an acceleration voltage of 2kV and a current of 30 mA. It is conducted for a period of at least one minute. For tungsten oxide sensors the discharge is conducted for 15 minutes in the sputtering system used to produce the oxide layer.