backward not blocking thyristors with a short recovery time

摘要

In a thyristor which, to shorten the critical hold-off interval, has a higher-resistance and thinner central zone of the first conduction type than normal thyristors and a highly doped first base zone of the same conduction type adjacent thereto, which base zone forms a p-n junction with the anode-side emitter zone, the critical hold-off interval is shortened still further in that the anode-side emitter zone is provided with inlets for the purpose of punch-through of the first base zone to the surface, in that the first base zone has a doping concentration of 0.5 x 1016 to 1 x 1018/cm3, and in that, to eliminate residual charges, a support thyristor zone is provided with a conducting connection for a negative gate voltage or is connected to the gate electrode via a diode. The first base zone may enclose the anode-side emitter zone completely and be part of a transistor layer sequence enclosing said emitter zone. IMAGE