METHOD FOR MANUFACTURING HIGH-POWER, HIGH-POWER FIELD EFFECT MOS TRANSISTOR WITH LATERALLY DISTRIBUTED BEARING DENSITY BELOW SAGGIN OXIDE

摘要

MOSFET-TYPE DEVICE COMPRISING A DOPED BODY WITH IMPURITIES OF A FIRST TYPE OF CONDUCTIVITY, A PLURALITY OF LOCAL REGIONS 220 OF A SECOND TYPE OF CONDUCTIVITY, DISTRIBUTED ON A SURFACE OF THE BODY, AND A PLURALITY OF SOURCE REGIONS 170 OF FIRST TYPE OF CONDUCTIVITY, SITUATED EACH IN A RESPECTIVE LOCAL AREA, THEIR DEPTH BEING LOWER THAN THOSE LOCAL AREAS, AND THEIR PERIPHERY IS LOCATED WITHIN A DISTANCE FROM THE LOCAL REGIONS TO THE SURFACE OF THE ELEMENT IN SUCH A WAY. DEFINING INVERSION CHANNELS 172. THE LOCAL REGIONS ARE SEPARATED BY A MAILLAGE OF THE BODY. A SIMILAR CONFIGURATION INSULATING LAYER 131, WHICH COVERED THESE MESH AND OVERLAPPING CHANNELS, IS DISPOSED UNDER A STICK ELECTRODE 132. A VERTICAL CONDUCTIVE REGION 130 OF THE FIRST TYPE OF CONDUCTIVITY IS PLACED BETWEEN THE LOCAL AREAS, ITS DOPING CONCENTRATION BEING SUPERIOR TO THAT OF THE BODY. / P P THE DOPING CONCENTRATION IN THE VERTICAL CONDUCTIVE REGION 130 IS CONSTANT IN THE LATERAL DIRECTION OF THE FIRST SURFACE BELOW THE INSULATING LAYER. / P P THE INVENTION APPLIES TO HIGH POWER MOSFET DEVICES HAVING LOW DIRECT RESISTANCE.