首页>
外国专利>
Method for removing borosilicate and boron rich oxides from a silicon body prior to doping silicon bodies with a SiB.sub.6 solid source
Method for removing borosilicate and boron rich oxides from a silicon body prior to doping silicon bodies with a SiB.sub.6 solid source
展开▼
机译:在用SiB.sub.6固体源掺杂硅体之前从硅体中除去硼硅酸盐和富硼氧化物的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for doping silicon bodies by the diffusion of boron into the bodies is described. The method is an improvement of processes where the silicon bodies are exposed in a first heating process to a gas mixture containing a predetermined boron quantity and boron and oxygen in a predetermined quantitative ratio and a second heating process is used to drive the boron into the silicon. In the method, a borosilicate glass layer and a boron-rich silicon dioxide layer are removed by first immersing the silicon body in hydrofluoric acid diluted with water and subsequently in an aqueous sulfuric acid/potassium permanganate solution.
展开▼