首页>
外国专利>
Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures
Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures
展开▼
机译:InGaAsP / InP异质结构中优先刻蚀光学平面镜面的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Highly reproducible, optically flat mirror facets are created by contacting a predetermined area of the InGaAsP/InP heterostructure system with a chemical etchant for a time period sufficient to expose a substantially vertical crystallographic surface throughout the entire heterostructure system. Contact of the exposed surface with HCl causes a preferred crystallographic plane to be exposed as an optically flat mirror facet.
展开▼