A stable melting zone is maintained during the crucible-less zone melting of a semiconductor crystal bar with dia. 30 mm, the process effected under specific. conditions, with a single-turn inductive heating coil, the inside dia. of the coil is set to be smaller than the dia. of the bar, fed into the melting zone. When the bar dia. of the recrystallised bar lies within 30-50 mm, the outside height of the melting zone is set to a value between 15 and 23mm. The stability of the melting zone is ensured even for bars of large dia. of over 75 and 100mm. The crystals produced are free from dislocations.
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