RF Amplifier having automatic gate bias switching in response to band selection

摘要

Herein disclosed is an RF amplifier which is equipped with a high- frequency amplifying element such as a dual gate MOS FET having its first gate fed with a bias voltage and its second gate fed with an AGC voltage, in which a switching diode is fed with a switching voltage thereby to switch the bands, in which the voltage at a voltage dividing point where the switching voltage is divided is used as the bias voltage, and in which the voltage at the dividing point is so raised upon the reception of a high band as to make the effect of the AGC uniform upon the receptions of the low and high bands.