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Rapid alteration of ion implant dopant species to create regions of opposite conductivity
Rapid alteration of ion implant dopant species to create regions of opposite conductivity
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机译:快速改变离子注入掺杂剂种类以产生相反电导率的区域
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摘要
A molecular beam epitaxial method of fabricating a semiconductor device is disclosed wherein the dopant is implanted by establishing a plasma containing ions of the dopant and the ions are coupled through a drift chamber to impinge on the growing substrate surface. The plasma formed in the ion gun has ions of boron and arsenic and therefore the dopants selected for implantation can be determined by setting a mass filter present in the ion gun. A change to the dopant of the opposite conductivity type can be accomplished in seconds by simply readjusting the mass filter in the ion gun.
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