Devices having chemically modified p-type InP surfaces

摘要

Semiconductor devices comprising p-type phosphorus containing semiconductor materials chosen from InP, GaP and InGaAsP have chemically treated surfaces comprising a monolayer or less of a metal chosen from silver, ruthenium, gold, platinum, and rhodium. Photoelectrochemical electrodes and Schottky barrier photovoltaic cells made from such treated semiconductors have reduced surface or grain boundary carrier recombination.