METHOD OF IMPARTING STEP VARIATION TO POSITIVE SLOPE ON VAC-UUM DEPOSITED LAYER

摘要

In manufacturing Josephson junctions or semiconductor devices by the deposition of metals and insulators in a vacuum chamber, the outlines of one or more of the layers may be determined by means of an overhang lift-off photoresist stencil. If the line of sight to the source of the evaporating material is not perpendicular to the surface of the wafer, the step at the stencil edge may have a negative slope, leading to voids or cracks in the insulating layers. …??A layer of metal (27) forming the base electrode of a Josephson device is deposited on a substrate (10) and has its edge defined by a photoresist mask (34). The mask has an overhang (35) at the edge of the base electrode. In carrying out the deposition step argon is admitted to the vacuum chamber to a pressure of 10-3 torr, and this pressure is maintained during deposition of the electrode layer. Collisions between the evaporated metal atoms and those of the argon gas tend to randomise the direction of the deposited metal atoms so that they no longer appear to come from a single point source, but deposit to make a region of uniform slope (29) under the overhang (35) of the stencil, the angle of this slope being a function of the argon pressure.