ION BEAM SPUTTER-ETCHED VENTRICULAR CATHETER FOR HYDROCEPHALUS SHUNT

摘要

AbstractThis invention is directed to an improved cerebro-spinal fluid shunt in the form of a ventricular catheterfor controlling the condition of hydrocephalus by reliev-ing the excessive cerebrospinal fluid pressure. Theinvention is further concerned with an improved methodfor fabricating the catheter and an improved method ofshunting the cerebral fluid from the cerebral ventriclesto other areas of the body.The obstruction of cerebrospinal fluid flow pathwaysor its inadequate absorption via the arachnoid villi intothe venus blood of the brain results in hydrocephalus.Surgical correction involves pressure controlled shuntingof the cerebrospinal fluid. The shunt will fail to func-tion if the inlet ventricular catheter apertures becomeblocked. Shunt flow failure will also occur if the ven-tricle collapses due to improper valve function causingover drainage.The ventricular catheter 10 of the present inventioncomprises a multiplicity of inlet microtubules 12. Eachmicrotubule has both a large opening 16 at its inlet endand a multiplicity of micoroscropic openings 18 along itslateral surfaces.The microtubules are perforated by a new and novelion beam sputter etch technique. The holes are etched ineach microtubule by directing an ion beam 20 through anelectro formed metal mesh mask 28 producing perforationshaving diameters ranging from about 14 micron to about150 microns.This combination of a multiplicity of fluoropolymermicrotubes, the numerous small holes provided in thelateral surfaces of the tubes, and the hydra-like distri-bution of the tubes provide a new and novel catheter.This structure assures a reliable means for shuntingcerebrospinal fluid from the cerebral ventricles toselected areas of the body.