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To the embodiment of a ternary semiconductor - conductors are compounds:

机译:对于三元半导体的实施例,导体为化合物:

摘要

A significant problem in making monocrystalline ternary semiconductor compound material, for example cadmium mercury telluride, is to produce useful quantities of the material which have electrical properties within a narrow band of values, and this depends on the material having a composition within a narrow range. Monocrystalline cadmium mercury telluride may be made by preparing a melt of the material, quenching this melt so as to produce a polycrystalline ingot 16, sealing the ingot 16 in an ampoule 13, and then forming a molten zone 20 at one end of the ingot 16 and passing this molten zone through the ingot 16 so as to form monocrystalline cadmium mercury telluride 21. The length of the molten zone 20 is from 25 to 40% of the length of the ingot 16.
机译:制备单晶三元半导体化合物材料(例如碲化镉汞)的一个重要问题是要产生有用量的具有在窄值范围内的电性能的材料,而这取决于组成在窄范围内的材料。可以通过制备材料的熔融物,将熔融物淬火以产生多晶锭16,将锭16密封在安瓿瓶13中,然后在锭16的一端形成熔融区20来制备单晶碲化镉汞。然后使该熔融区通过锭料16,以形成单晶碲化镉镉汞。熔融区20的长度为锭料16的长度的25%至40%。

著录项

  • 公开/公告号FR2461027B1

    专利类型

  • 公开/公告日1983-12-30

    原文格式PDF

  • 申请/专利权人 PHILIPS GLOEILAMPENFABRIEKEN NV;

    申请/专利号FR19800014741

  • 发明设计人

    申请日1980-07-02

  • 分类号C30B15/10;

  • 国家 FR

  • 入库时间 2022-08-22 08:46:03

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