PHOTOTRANSISTOR HAVING AN EMITTER-BASE HETEROJUNCTION

• 1. 具有异质结的背面发射极太阳能电池结构及制造其的方法和装置 [P] . 中国专利： CN113302751A . 2021-08-24
• 2. 用于制造具有异质结和发射极扩散区的光伏太阳能电池的方法 [P] . 中国专利： CN110943143A . 2020-03-31
• 3. Phototransistor of the type having an emitter-base heterojunction [P] . 美国专利： US4620210A . 1986-10-28

  机译： 具有发射极-基极异质结的类型的光电晶体管

• 4. PHOTOTRANSISTOR HAVING AN EMITTER-BASE HETEROJUNCTION [P] . 英国专利： GB2083699A . 1982-03-24

  机译： 具有发射极基异质结的光敏电阻

• 5. EMITTER-BASE HETEROJUNCTION PHOTOTRANSISTOR WITH TRANSMITTER LAYER LOCALLY OF REVERSE TYPE [P] . 法国专利： FR2490014A1 . 1982-03-12

  机译： 局部具有反型发射层的基于发射极的异质结光晶体管

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• 2. Spatially Bandgap‑Graded MoS2( 1−x)Se2x Homojunctions for Self‑Powered Visible–Near‑Infrared Phototransistors [J] . Hao Xu, Juntong Zhu, Guifu Zou, 纳微快报：英文版 . 2020,第002期
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• 6. Lateral Structured Phototransistor Based on Mesoscopic Graphene/Perovskite Heterojunctions [O] . Dahua Zhou, Leyong Yu, Peng Zhu, 2021
• 7. High-performance lateral MoS2-MoO3 heterojunction phototransistor enabled by in-situ chemical-oxidation [O] . Kaixi Bi, Qiang Wan, Zhiwen Shu, 2020

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