Method of raising the breakdown voltage of an integrated capacitor and capacitor manufactured by this method

摘要

The invention relates to a method suitable for raising the breakdown voltage of a capacitor of the integrated circuit type formed on a semiconductor substrate and characterized in that the lower plate of the capacitor is under etched so that an air wedge is obtained. As a result of the air wedge, the electric current passed through the semiconductor material is lengthened and the breakdown phenomena at the edges of the capacitor are reduced. The invention also relates to capacitors obtained in this manner.