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DISTURBANCE RESISTANCE MAGNETIC CHARACTERISTIC TESTING METHOD OF MAGNETIC BUBBLE MEMORY

机译:磁泡存储器的抗干扰磁特性测试方法

摘要

PURPOSE:To simplify a testing device, by providing a bias coil in the inside of a magnetic shielding body of a magnetic bubble memory chip, and testing a disturbance resistance magnetic field characteritic by making a disturbance current flow into this bias coil and a driving coil. CONSTITUTION:On the circumference of a magnetic bubble memory chip 5, driving coils 3, 4 for generating a rotation driving magnetic field and permanent magnets 2, 6 for forming a bias magnetic field are placed, and the external magnetic field is shielded by a shielding case 1. Also, in the inside of the shielding case 1, a bias coil 12 is placed, of which a magnetic bubble memory device is constituted. In this state, a current which has superposed a disturbance current on a driving current is made flow to the driving coils 3, 4 also a current which has superposed the disturbance current on a bias current is made to flow to the bias coil 12, an artificial disturbance magnetic field is generated, and a test of a disturbance resistance magnetic field is executed. In this way, an especially large-sized testing device becomes unnecessary, and the device is simplified.
机译:目的:为简化测试装置,在磁泡存储芯片的磁屏蔽体内部提供一个偏置线圈,并通过使干扰电流流入该偏置线圈和驱动线圈来测试其抗干扰磁场特性。构成:在磁气泡存储芯片5的周围,放置有用于产生旋转驱动磁场的驱动线圈3、4和用于形成偏置磁场的永磁体2、6,外部磁场被屏蔽层屏蔽另外,在屏蔽壳1的内部,放置有偏置线圈12,该偏置线圈12构成磁气泡存储装置。在该状态下,使在驱动电流上叠加了干扰电流的电流流向驱动线圈3、4,并且使在偏置电流上叠加了干扰电流的电流流向偏置线圈12,产生人工干扰磁场,并进行抗干扰磁场的测试。这样,就不需要特别大型的测试设备,并且简化了该设备。

著录项

  • 公开/公告号JPS6037551B2

    专利类型

  • 公开/公告日1985-08-27

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP19810085265

  • 发明设计人 NAKAMURA KAN;

    申请日1981-06-03

  • 分类号G11C11/14;G11C19/08;

  • 国家 JP

  • 入库时间 2022-08-22 08:22:06

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