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WRITING CIRCUIT IN PROM

机译:在毕业舞会上写电路

摘要

PURPOSE:To obtain a PROM writing circuit using a low writing current by writing data in the PROM every bit to reduce a peak current at the writing time. CONSTITUTION:An input data signal 1, a writing signal 2 and a write permitting signal 13 are inputted to each three-input NOR gates 7. The output 14 of the NOR gate 7 is written in a PROM cell 6 selected by a data decoder 5 through a selector 4. Only the write permitting signals 13 corresponds to bits 1-n respectively. Namely, the input data signal 1 is impressed during the writing signal 2 is turned on and the write permitting signals 13 corresponding to the bits 1-n are generated with time division. Since the peak current at the writing time is reduced, the PROM writing circuit using the low writing current can be obtained.
机译:目的:通过将数据写入PROM的每一位来降低写入时的峰值电流,从而获得一种低写入电流的PROM写入电路。构成:将输入数据信号1,写入信号2和写入允许信号13输入到每个三输入NOR门7。NOR门7的输出14被写入由数据解码器5选择的PROM单元6中通过选择器4。仅允许写入信号13分别对应于位1-n。即,在写信号2被接通期间,输入数据信号1被施加,并且以时分方式生成与位1-n相对应的写允许信号13。由于减小了写入时的峰值电流,因此可以获得使用低写入电流的PROM写入电路。

著录项

  • 公开/公告号JPS607694A

    专利类型

  • 公开/公告日1985-01-16

    原文格式PDF

  • 申请/专利权人 NIPPON DENKI KK;

    申请/专利号JP19830115529

  • 发明设计人 WASHIN YUTAKA;YAMADA KOUICHI;

    申请日1983-06-27

  • 分类号G11C17/00;

  • 国家 JP

  • 入库时间 2022-08-22 08:21:04

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