首页> 外国专利> RADIATION RESIST AND FORMATION OF RADIATION RESIST PATTERN

RADIATION RESIST AND FORMATION OF RADIATION RESIST PATTERN

机译:辐射抵抗力和辐射抵抗力模式的形成

摘要

PURPOSE:A positive radiation resist having improved sensitivity, and resolution, easily handleable, comprising methyl methacrylate-methacrylic acid copolymer and a specific crosslinking agent. CONSTITUTION:A copolymer having a weight-average molecular weight of 10,000-200,000, obtained by copolymerizing methyl methacrylate with methacrylic acid at a molar ratio of 100:1-15, is incorporated with a crosslinking agent (C) of the formula (R is H or CH3; x is an integer 1-9; y and z are 0, 1, 2, or 3) at a ratio of the number of epoxy groups in (C) to that of carboxyl groups in the copolymer of 0.1-3.0 to give a radiation resist. The resist is then dissolved in a solvent and applied to a base board, heated at 100-170 deg.C, and crosslinked to form a resist film, which is exposed to radiation at a given area to form latent images of patterns. The images are then developed to give the positive images of the patterns.
机译:用途:一种正辐射抗蚀剂,具有改进的灵敏度和分辨率,易于操作,包含甲基丙烯酸甲酯-甲基丙烯酸共聚物和特定的交联剂。组成:通过将甲基丙烯酸甲酯与甲基丙烯酸以100:1-15的摩尔比共聚获得的重均分子量为10,000-200,000的共聚物与式(R为H或CH3; x为1-9的整数; y和z为0、1、2或3),(C)中的环氧基数与共聚物中的羧基数之比为0.1-3.0赋予抗辐射能力。然后将抗蚀剂溶解在溶剂中并施加到基板上,在100-170℃下加热,并交联以形成抗蚀剂膜,该抗蚀剂膜在给定区域处暴露于辐射以形成图案的潜像。然后将图像显影以给出图案的正像。

著录项

  • 公开/公告号JPS5947301B2

    专利类型

  • 公开/公告日1984-11-17

    原文格式PDF

  • 申请/专利权人 MATSUSHITA ELECTRIC IND CO LTD;

    申请/专利号JP19780123060

  • 申请日1978-10-04

  • 分类号G03F7/039;C08G59/00;C08G59/42;C08L33/00;C08L33/02;C08L33/04;C08L33/12;C08L63/00;G03F7/038;G03F7/20;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 08:20:28

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