method for the passivation of the surface of a pn junction intercept

摘要

p id="P-ENG-00001" num="00001"br / The invention relates to a semiconductor device including a semiconductor body having a surface, at least two areas of the types of conductivity opposed in the body, a junction PN with the interface between the two areas, this junction PN extending to surface from the body, and a layer of polycrystalline silicon of strong resistivity on surface. /p[FR2382094A1]