METHOD OF LASER ANNEALING OF SUBSURFACE ION IMPLANTED REGIONS

摘要

ABSTRACTA METHOD OF LASER ANNEALING OFSUBSURFACE ION IMPLANTED REGIONSA method for annealing ion implantedregions buried in a semiconductor substratewithout the undesirable effects of thermaldiffusion which includes the radiation of thesubstrate by a continuous laser having anemission frequency longer than 600 nanometerswhich the buried ion implanted regions willabsorb strongly but which will be substantiallyunabsorbed by the unimplanted regions.Superior results can be obtained when thesubstrate is heated to approximately 300° dur-ing this laser annealing.