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Improved p-i-n- and avalanche photodiodes
Improved p-i-n- and avalanche photodiodes
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机译:改进的p-i-n和雪崩光电二极管
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摘要
High-speed p-i-n and avalanche photodetectors (photodiodes) use a heavily doped buried layer (14) to greatly limit minority carriers generated by incident light in the buried layer (16) and the substrate (12) of the device from reaching the cathode (18) and thus enhances device response time while substantially decreasing dark current. A p-i-n diode of this type with a 1.1 square millimeter active area can operate with an unusually small (e.g. 5 volt) reverse bias and is capable of having edge rise and fall times in the 4 nanosecond range.
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