Insulation Central emulator bipolar transistor formed within a silicon substrate

摘要

PURPOSE:To enable to form an IC compositely formed with MOS transistors by forming in a specific structure, thereby improving the transport efficiency of a lateral type bipolar transistor. CONSTITUTION:An element forming region made of a silicon thin film layer 11 is fored on an SiO2 substrate 10, and an n+ type emitter region 12, a p type base first region 13, split n+ type collector regions 14, a p type base second region 15 and a p+ type base region 16 are formed in parallel. The regions 12, 14, 16 are formed in a wide width to be connected with electrodes, and the widths of the connectors 17 between the regions 13 and 15 and between the 13 and 15 is formed narrowly. Since an insulator is provided under the emitter region, many of electrons implanted from the emitter to the base are arrived at the collector to enhance the transport efficiency.