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Brief description of the formation of a component of the memorisation of the type memory has bubbles and component produced by this

机译:简要说明类型记忆的组成部分具有气泡和由此产生的组成部分

摘要

P the invention relates to the formation of components by a memory has bubbles. / p & & p & the method consists in deposit a first dielectric layer 12 on a substrate of garnet 10. It forms a second dielectric layer 14 on the first. It is formed on the second layer is a diagram of a protective lining is then etched in the rectilinear walls by a means which do not the first layer decape. It is deposit a conductive layer 20 in the notches formed during the etching and on the surface of the diagram of a protective lining. It applies a material of the protective coating material on the part that is relatively small, for be covered by a conductor, in accordance with the conductive layer is preserve. It is chemically decape this conductive layer in the regions not covered by the material of the protective lining coarse. Finally, it removes the protective coating material of the coarse remaining in the same time as the coucheconductrice in order to leave a flat surface constituted by a conductor at the level of a surface in the same plane as the surface of the second layer. / p
机译:本发明涉及通过具有气泡的存储器形成部件。 & &该方法包括在石榴石10的衬底上沉积第一介电层12。它在第一石榴石10上形成第二介电层14。它形成在第二层上,然后是通过不使第一层脱开的方法在直线壁上蚀刻保护衬的示意图。它在蚀刻过程中形成的凹口中和保护衬里图的表面上沉积了导电层20。根据保护层,其将保护性涂层材料的材料施加在相对较小的部分上,以被导体覆盖。在未被保护衬里的材料粗大覆盖的区域中,对该导电层进行化学剥离。最后,它去除了与床导电体同时残留的粗大的保护性涂层材料,以便在与第二层表面相同的平面内的表面高度处留下由导体构成的平坦表面。

著录项

  • 公开/公告号FR2452762B1

    专利类型

  • 公开/公告日1985-05-10

    原文格式PDF

  • 申请/专利权人 CONTROL DATA CORP;

    申请/专利号FR19800006647

  • 发明设计人

    申请日1980-03-25

  • 分类号G11C11/14;

  • 国家 FR

  • 入库时间 2022-08-22 07:56:25

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