METHOD AND DEVICE FOR THE CONTINOUS PRODUCTION OF AN ENDLESS ASSEMBLY OF WAFERS WITH A CONSTANT WIDTH COMPRISED OF CREAM LAYERS BETWEEN THE WAFER LAYERS

• 1. 薄片处理装置和包括该薄片处理装置的图像形成设备 [P] . 中国专利： CN102145829B . 2014.08.13
• 2. 薄片处理装置和包括该薄片处理装置的图像形成设备 [P] . 中国专利： CN101231488B . 2011.07.20
• 3. METHOD AND DEVICE FOR THE CONTINOUS PRODUCTION OF AN ENDLESS ASSEMBLY OF WAFERS WITH A CONSTANT WIDTH COMPRISED OF CREAM LAYERS BETWEEN THE WAFER LAYERS [P] . 英国专利： GB2110913A . 1983-06-29

  机译： 连续生产宽度恒定的，包括薄片之间的奶油层的薄片的连续生产的方法和设备

• 4. METHOD AND DEVICE FOR THE CONTINUOUS PRODUCTION OF AN ENDLESS ASSEMBLY OF WAFERS WITH A CONSTANT WIDTH,COMPRISED OF CREAM LAYERS BETWEEN THE WAFER LAYERS [P] . 德国专利： DE3246000D2 . 1983-06-01

  机译： 连续生产宽度恒定的，由薄饼层之间的奶油层组成的无数薄饼的方法和装置

• 5. METHOD AND DEVICE FOR THE CONTINUOUS PRODUCTION OF AN ENDLESS ASSEMBLY OF WAFERS WITH A CONSTANT WIDTH, COMPRISED OF CREAM LAYERS BETWEEN THE WAFER LAYERS [P] . 世界知识产权组织专利： WO8203969A1 . 1982-11-25

  机译： 连续生产宽度恒定的，由薄饼层之间的奶油层组成的无数薄饼的方法和装置

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• 3. Growth and characterization aluminum gallium nitride/gallium nitride heterostructures on silicon(111) wafers using various buffer layers. [D] . Venugopal, Rajesh. 2001
• 4. Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE [O] . Xin Li, Matthew B. Jordan, Taha Ayari, -1
• 5. Wafer-Scale Two-Dimensional MoS2 Layers Integrated on Cellulose Substrates Toward Environmentally Friendly Transient Electronic Devices [O] . -1

• 1. Detailed Micro Raman Spectroscopy Analysis of Doped Silicon Thin Film Layers and Its Feasibility for Heterojunction Silicon Wafer Solar Cells [J] . Z. P. Ling ,J. Ge ,R. Stangl . 材料科学与化学工程（英文） . 2013,第5期
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• 5. 矩形波导中任意高度和宽度的薄片 [C] . 黄漪 . 87年全国微波会议 . 1987
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