首页> 外国专利> VERTICALLY MAGNETIZED FILM ELEMENT OF POLYCRYSTALLINE COBALT FERRITE AND MANUFACTURE THEREOF

VERTICALLY MAGNETIZED FILM ELEMENT OF POLYCRYSTALLINE COBALT FERRITE AND MANUFACTURE THEREOF

机译:多晶钴铁素体的垂直磁化膜元件及其制造

摘要

PURPOSE:To obtain a Co ferrite magnetized film showing vertically magnetized characteristics irrespective of a polycrystal by using Co ferrite provided with a properly small spontaneous magnetizing MS and utilizing a stress based on difference between coefficients of thermal expansion of a substrate and the magnetized film. CONSTITUTION:Making a spontaneous magnetizing MS properly small can be achieved by substituting CO2+ in CoFe2O4 and/or Fe3+ with a proper metal ion. In other words, a ploycrystalline Co ferrite film shown by CO1-xFe2-yMx +yO4 [M is a metal ion except Fe3+, 0.5=(x+y)] is provided on a substrate. If, in this time, an amount of substitution (x+y) is smaller than 0.5, a vertically magnetized film can not be obtained because the spontaneous magnetizing MS is too large. However, since increase in an amount of substitution (x) of M ion for Co causes decrease in magneto-optical effect of the Co ferrite magnet ized film, it is preferable to make the amount of substitution zero by devising decrease in spontaneous magnetization with only an amount of substitution (y) for Fe. An amount of replacement (x) is used in the range of x=0.5.
机译:目的:通过使用具有适当小的自发磁化MS的Co铁氧体并利用基于基板和磁化膜的热膨胀系数之间的差异的应力,获得与多晶无关的,显示垂直磁化特性的Co铁氧体磁化膜,而与多晶无关。组成:通过使用适当的金属离子代替CoFe2O4中的CO 2+和/或Fe 3+,可以使自发磁化强度适当减小。换句话说,在基板上设置有以CO 1 -xFe 2 -yMx + yO 4 [M是除Fe 3+以外的金属离子,0.5≤(x + y)]表示的多晶Co铁氧体膜。如果此时的取代量(x + y)小于0.5,则由于自发磁化MS太大而不能获得垂直磁化膜。但是,由于M离子对Co的取代量(x)的增加引起Co铁氧体磁化膜的磁光效应的降低,因此优选通过仅使自发磁化的减少量为零而使取代量为零。 Fe的取代量(y)。在x <= 0.5的范围内使用替换量(x)。

著录项

  • 公开/公告号JPS61111511A

    专利类型

  • 公开/公告日1986-05-29

    原文格式PDF

  • 申请/专利权人 NIPPON SHEET GLASS CO LTD;

    申请/专利号JP19840233776

  • 发明设计人 GOMI MANABU;ABE MASANORI;

    申请日1984-11-06

  • 分类号C01G49/00;G11B11/10;G11B11/105;H01F10/20;H01F41/22;

  • 国家 JP

  • 入库时间 2022-08-22 07:51:22

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