DEVICE FOR DRY REMOVAL OF SI SURFACE DAMAGE AFTER DRY ETCHING

摘要

PURPOSE:To obtain the device much effective in damage removal by a low- temperature process, by providing a target with a built-in heater and an ion source in a vacuum unit, and providing an UV photo-transmitting window, an IR photo-transmitting window, valves, etc. which selectively introduce oxygen gas, chlorine gas, and fluorine gas. CONSTITUTION:A vacuum unit 11 is equipped with an exhaust system 12 and contains a target 13 on which an Si substrate is mounted. The target 13 has a built-in heater 13a which can heat the Si substrate. An ion source 14 is installed to the vacuum unit 11 so as to irradiate the Si substrate on the target 13 with ion beams 15. An UV photo-transmitting window 16 and an IR photo- transmitting window 17 are formed to the vacuum unit 11 so that the Si substrate on the target may be irradiated through each window 16, 17 with UV beams 20 and IR beams 21 emitted from an UV light source 18 an IR light source 19 which are installed outside the unit 11. Further, the unit 11 is equipped with valves 22, 23 which selectively introduced chlorine gas, fluorine gas, or oxygen gas.