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CADMIUM TELLURIDE SINGLE CRYSTAL AND PRODUCTION OF CADMIUM TELLURIDE SINGLE CRYSTAL
CADMIUM TELLURIDE SINGLE CRYSTAL AND PRODUCTION OF CADMIUM TELLURIDE SINGLE CRYSTAL
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机译:碲化镉单晶和碲化镉单晶的生产
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摘要
PURPOSE:To obtain a large-sized cadmium telluride single crystal, by adding a specific amount of Ge to the molten raw material. CONSTITUTION:In the crystal growth of a CdTe single crystal from a molten raw material, Ge is added to the molten raw material in an amount of 1X1018-9X1021atom/cm3. The molten raw material is pulled up by liquid- encapsulated Czochralski method keeping the temperature gradient near the solid-liquid interface to =100 deg.C/cm along the direction of the crystal growth.
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机译:目的:通过向熔融原料中添加一定量的锗,以获得大尺寸的碲化镉单晶。组成:在CdTe单晶从熔融原料中生长晶体时,将Ge以1X10 18 -9X10 21原子/ cm 3的量添加到熔融原料中。通过液体封装的切克劳斯基(Czochralski)方法将熔融的原料向上拉,使固液界面附近的温度梯度沿晶体生长方向保持在<= 100℃/ cm。
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