首页> 外国专利> METHOD FOR REMOVING OXIDE FILM FROM SURFACE OF ZR AND HF AS WELL AS ITS ALLOY

METHOD FOR REMOVING OXIDE FILM FROM SURFACE OF ZR AND HF AS WELL AS ITS ALLOY

机译:从ZR和HF及其合金表面去除氧化物膜的方法。

摘要

PURPOSE:To remove thoroughly a titled film of various shapes without any problem in safety and the decrease in yield in an AC electrolytic treatment method in NH4F, by adding ammonium salt of such as citric acid or the like and specifying pH and current density. CONSTITUTION:Zr, Hf and an alloy thereof having an oxide film are subjected to Ac electrolysis in an aq. electrolytic soln. which contains 0.1-0.5mol concn. of NH4F and is adjusted to 5-6pH by adding =1 kinds among NH4, Na and K salts of a citric acid, oxalic acid, and tartaric acid thereto. The current density in this stage is set at 0.02-0.5A/cm2. Then the dissolving rate of the base metal itself is suppressed extremely low, and the dissolving rate in the boundary layer part of the base metal and the oxide film layer is increased, whereby the oxide film is stripped from the base metal. If slight NH4NO3 is allowed to exist in the above-described aq. electrolytic soln., the power for stripping the oxide film particularly in the case of the Sn-contg. alloy is further improved.
机译:目的:通过添加诸如柠檬酸之类的铵盐并指定pH和电流密度,以彻底清除各种形状的标题膜,而不会在安全性和NH 4 F的交流电解处理方法中的收率降低方面带来任何问题。组成:Zr,Hf及其具有氧化膜的合金在aq。电解溶液。其中含有0.1-0.5mol的浓缩物。通过向其中加入柠檬酸,草酸和酒石酸的NH 4,Na和K盐中的≥= 1种,将其调节至5-6pH。该阶段的电流密度设定为0.02-0.5A / cm 2。然后,将母材本身的溶解速度抑制得非常低,并且提高了母材和氧化膜层的边界层部分中的溶解速度,从而从母材上剥离了氧化膜。如果在上述水溶液中存在少量的NH4NO3。电解溶液,剥除氧化膜的能量,特别是在Sn接触的情况下。合金得到进一步改善。

著录项

  • 公开/公告号JPS6056797B2

    专利类型

  • 公开/公告日1985-12-11

    原文格式PDF

  • 申请/专利权人 MITSUBISHI METAL CORP;

    申请/专利号JP19820157873

  • 发明设计人 YANAGISAWA SATOKO;KOMADA KIICHI;

    申请日1982-09-10

  • 分类号C25F1/08;

  • 国家 JP

  • 入库时间 2022-08-22 07:44:30

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