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process for the production of cavities in silizierten siliziumkarbidkörpern
process for the production of cavities in silizierten siliziumkarbidkörpern
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机译:碳化硅碳化硅坯体中产生空腔的方法
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1382987 Silicon carbide artefacts UNITED KINGDOM ATOMIC ENERGY AUTHORITY 30 Oct 1972 [10 Nov 1971] 52306/71 Heading C1A A green silicon carbide artefact is formed with a hole therein, the hole containing graphite of density at least 0À963 gm./cc. The so-formed artefact may be siliconized. One method for providing the hole is that of protecting a hole within a green silicon carbide artefact during siliconizing of the artefact by filling the hole with graphite of density at least 0À963 gm./cc. In an alternative method a graphite plug is surrounded by green silicon carbide to form an artefact, siliconizing and drilling out the plug, preferably leaving a film of graphite on the surface of the hole.
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