Method of deposition of amorphous silicon, by thermal decomposition at low temperature and device for implementing the process

摘要

The invention proposes deposit of the amorphous silicon, at low temperature by thermal decomposition of disilane which creates upstream of the thermal reactor during the same operation, then by a physicochemical - chemical method, such that the action of the atomic 1996 on the monosilane. / p & & p & the invention applies in particular in deposits of amorphous silicon layers doped or not doped on substrates.