首页> 外国专利> Brief description of embodiments of a shielding between two under - sets of a microcircuit and application of this method has the embodiment of a monolithic circuit comprising two integrated under - assemblies thus insulated with respect

Brief description of embodiments of a shielding between two under - sets of a microcircuit and application of this method has the embodiment of a monolithic circuit comprising two integrated under - assemblies thus insulated with respect

机译:在两个微电路的下部组件之间的屏蔽的实施例的简要说明以及该方法的应用具有包括两个相对于此绝缘的集成的下部组件的单片电路的实施例。

摘要

Method of producing shielding between two sub-assemblies of a microcircuit, characterised in that it comprises the steps of: a. Preparing a monocrystalline semiconductor substrate intended to receive a monolithic integrated circuit formed by several sub-assemblies; b. Delimiting an earth region at the surface of the substrate between the sub-assemblies to be insulated by shielding; c. Etching the rear face of the substrate so as to reduce the latter's thickness in a region corresponding, on the rear face, at least to the earth region defined on the front face; d. Producing passages in the rear face, by etching, which allow the rear face and the front face of the substrate to communicate within the region of reduced thickness; e. Metallising, with a metal suitable for forming an earth plane, the region delimited for this purpose on the front face, all or part of the rear face including the region of reduced thickness, and the walls of the passages, so as to obtain electrical connection between the earth plane of the front face and the rear metallisation; f. Using this earth plane as earth for the sub-assemblies of the integrated circuit. Application: production of a monolithically integrated microwave antenna reception head. IMAGE
机译:在微电路的两个子组件之间产生屏蔽的方法,其特征在于,它包括以下步骤:a。准备用于容纳由几个子组件形成的单片集成电路的单晶半导体衬底; b。在子组件之间的基板表面上划定要通过屏蔽进行绝缘的接地区域; C。蚀刻衬底的背面,以减小衬底的厚度,该厚度在背面上至少对应于在正面上限定的接地区域的区域中; d。通过蚀刻在背面上产生通道,该通道允许基板的背面和正面在厚度减小的区域内连通; e。用适合于形成接地平面的金属镀金属,为此目的在前表面,后表面的全部或部分(包括厚度减小的区域)和通道壁上划定边界,以便获得电连接在正面的接地平面和背面的金属化层之间; F。使用该接地层作为集成电路组件的接地。应用:单片集成微波天线接收头的生产。 <图像>

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