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PROTECTIVE TRIAC WITHOUT GAPETTE, REALIZED FROM A SUBSTRATE WITH HIGH RESISTIVITY

机译:由高电阻率的基板实现的不带加蓬的可控硅

摘要

P THE INVENTION CONCERNS A PROTECTIVE TRIAC WITHOUT TRIGGERING, INJURING IN CASE OF OVERVOLTAGE. / P P TO AVOID UNCERTAINTY ON THE TENSION VOLTAGE AND A LACK OF UNIFORMITY OF STARTING CURRENTS, IT IS DETERMINED THAT THE TRIGGERING IS DETERMINED BY THE VOLUME CLASSIFICATION OF A GA1AS1 JUNCTION BETWEEN THE TRIGGER REGION INTERNEGA1 OF ONE OF THE THYRISTORS HEAD-BECHETH1, TH2 CONSTITUTING THE TRIAC AND A SPECIFIC REGIONAS1 MORE DOPED THAN THE CENTRALECE1, CE2 OF THE SUBSTRATE. SPECIFIC REGIONAS1 IS PROPERLY LOCALIZED BETWEEN THYRISTOR CATHODE SHORT CIRCUIT HOLES. / P
机译:本发明涉及一种保护三端双向可控硅,该保护三端双向可控硅开关没有触发,而不会因过电压而受伤。

为了避免张力电压的不确定性和启动电流的缺乏一致性,可以确定,触发是由一个区域的触发点之间的GA1AS1结的体积分类确定的-BECHETH1,TH2构成了双向可控硅和特定区域AS1的掺杂量远大于基质的CENTRALECE1,CE2。特定的REGIONAS1正确放置在晶闸管阴极短电路孔之间。

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