METHOD OF MAKING TWO DIFFERENT JUXTAPOSED MOS STRUCTURES AND DIFFERENT DOPING AND FRAME TRANSFER MATRIX OBTAINED THEREBY

摘要

P THE PRESENT INVENTION CONSISTS TO DEPOSIT A POLYCRYSTALLINE SILICON LAYER 1 DOPED ON A SILICONE DIELECTRIC THAT IS ISOLATED OF THE SUBSTRATE. A PHOTOLITHOGRAVIDE PERMITS THE DEFINITION OF THE ZONES INTENDED FOR IONIC IMPLANTATION FOR THE BURIAL CHANNEL 11, THE ZONES TO BE PROTECTED BEING MASKED BY THE REMAINING SILICON. / P P A DOUBLE SILICA-NITRIDE LAYER 12, 13 IS FORMED AFTER THE BARE SUBSTRATE IN IMPLANTED REGIONS. / P P A PHOTOLITHOGRAVIDE OF THE SILICA-NITRIDE DOUBLE LAYER ALLOWS THE ACCESS TO THE FIRST LEVEL OF SILICON FROM A SECOND DOPED SILICON LAYER 9. / P P THE PHOTOLITHOGRAVURE OF ALL OF THE TWO SILICIUMS PERMITS TO CARRY OUT VARIOUS STRUCTURES IN WHICH, FOR EXAMPLE, THE TRANSITION ZONE OF THE TWO DIELECTRICS IS SITUATED UNDER THE SAME OR IN WHICH FOR EXAMPLE THE TRANSITION ZONE IS SELF-ALIGNED TO A GRID . / P P FRAME TRANSFER MATRICES. / P