Brief description of embodiments of the two mos juxtaposed different structures and different dopings and frame transfer matrix is obtained by this

摘要

The present invention consists in deposit a layer 1 of polycrystalline silicon doped on a dielectric of silica, which insulates it from the substrate. A photolithography makes it possible to to define the areas intended to undergo an ion implantation embedded in the channel 11, the zones a protect masked given by the silicon remaining. / p & & p & a double layer of nitride, silica - 12, 13 is formed after putting a core of the substrate in the regions implanted. / p & & p & a photolithographic etching of the double layer of nitride, silica - makes it possible to access to the first level of silicon of a second layer of silicon doped 9. / p & & p & the photolithography of the assembly of two silicons makes it possible to carry out various structures in which, for example, the transition zone of the two dielectric is located under the same grid, or else in which, for example, the transition zone is self - aligned has a gate. / p & & p & matrices a frame transfer.